general release document consult factory for current revision revisions revision description approved date - initial release luis vargas 6/5/2008 a updated part numbers luis vargas 1/9/09 specificati on control drawing q - tech corporation 10150 w. jefferson blvd. culver city, ca 90232 - 3510 prepared by : luis vargas date 6/5/08 low profile 32 pin flat - pack hybrid crystal oscillator, tcxo, class s, standard design for hcmos up to 90mhz unless otherwise specified, dimensions are in inches. tolerances: 3 place decimal = .005 2 place decimal = .02 1 place decimal = .1 fractions = 1/16 angles = 2 degrees checked by: quality date drawing no.: qt821 and qt822 square - wave revision a released by: document contro l approved by: engineering date scale none size a cage code 51774 sheet 1 of 8 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 temp, deg c freq error, ppm example 1 of temperature stability example 2 of temperature stability 50mhz tcxo ,vcc=12v,+25 c 9/17/08 -180 -170 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 1 10 100 1000 10000 100000 frequenc y offset, hz l(f), db c 0 0.05 0.1 0.15 0.2 0.25 0.3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 frequency drift, ppm elapsed time, days aging data
qt821 and qt822 square - wave rev. q - tech corpor a tion 10150 w. jefferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 2 of 8 a 1.0 scope this specification establishes the detail requirements for low profile hybrid, hermetically sealed, hcmos output temperature compensated crystal oscillators (tcxo) for use in space flight missions 2.0 applicable documents the following documents of the latest issue form a part of this drawing to the extent specified herein. 2.1 specifications and standards specifications military mil - s - 19500 semiconductor devices, general specification for mil - prf - 55310 crystal oscillators, general specification for mil - prf - 38535 integrated circuits, (microcircuits) manufacturing, general specification for mil - prf - 3853 4 hybrid microcircuits, general specification for standards military mil - std - 202 test methods for electronic and electrical component parts mil - std - 883 test methods and procedures for microelectronics mil - std - 1686 electrostatic discharge control progr am for protection of electrical and electronics parts, assemblies and equipment. 2.2 conflicting requirements in the event of conflict between requirements of this specification and other requirements of the applicable detail drawing, the precedence i n which requirements shall govern, in descending order, is as fo l lows: a) applicable customer purchase order. b) applicable detail drawing. c) this specification. d) other specifications or standards referenced in 2.1 herein . 2.3 customer p urchase o rder s pecial r equir ements additional special requirements shall be specified in the applicable customer purchase order when additional requirements or modifications specified herein are needed for compliance to special program or product line requir e ments . 3.0 performanc e requirements 3.1 general definition the tcxo is a high reliability signal generator that provides a s quare - wave output . the tcxo has been designed to operate in a spaceflight environment with an expected lifetime in excess of 15 years. lifetime is defi ned as the sum of operational and storage environments.
qt821 and qt822 square - wave rev. q - tech corpor a tion 10150 w. jefferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 3 of 8 a 3.1.1 electrical characteristics parameter symbol conditions value unit frequency nom. fo - 2 . to 90 mhz supply voltage, nom. vs vs 5% see part number generation table v input current, max. is v s, nom. / ta=+25 c 50 ma freq. stability vs. temperature (including 5% load change and 5% input voltage change) f/fc (ta) contact factory for other options available see part number generation table ppm electrical frequency adjustment min. (when spec ified) f/fo ( vcc) 5 ppm two options : 1) via an external se lect - at - test resistor connected from pin 1 to ground 2) via external tuning voltage 5.0 ppm aging max f/fo over 10 year (first year 1 ppm) 5.0 ppm freq. stability vs. vacuum f/fo met by design, not tested 0.2 ppm short term stability f/fc( t) t=1sec. (allan variance) 0.001 ppm rf output contact factory for other options available 30 to 70 3rd 70.1 to 90 3 rd x mhz output voh / vol load=15pf, vcc=nom. 0.9 vcc / 0.1 vcc v duty cycle dc load=15pf/ @50%vcc, ta=+25 c see part number generation table % rise - / fall time tr / tf 20%~80% vout, 80%~20% vout .5 7 (see note a) nsec load 15 pf phase nois e @ freq. offset ( f) ( f) ( f) ( f) ( f) f=10hz f=100hz f=1khz f=10khz f=100khz - 75 - 105 - 130 - 140 - 140 contact factory for other options available dbc/hz dbc/hz dbc/hz dbc/hz dbc/hz a: s upply current, rise & fall time are frequency dependent 3.2 absolute maximum rating supply voltage 0 to +6.0 vdc dc input current 50 ma maximum storage temperature range - 62 c to +125 c lead temperature (soldering, 10 seconds) 300 c 3.2. 1 physical characteristics 3.2. 1 .1 dimensions - the tcxo o utline dimensions and terminal connections shall be as shown in figure 1 herein. 3.2. 1 .2 weight - the tcxo shall weigh less than or equal to 15 grams. 3.2. 1 .3 materials - the tcxo package body and lead finish shall be gold in accordance with mil - prf - 38534.
qt821 and qt822 square - wave rev. q - tech corpor a tion 10150 w. jefferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 4 of 8 a 3.2. 2 environmental conditions sine vibration mil - std - 202, method 204, tc d random vibration mil - std - 202, method 214 tc i - k (15 minutes per axis) shock mil - std - 202, method 213, tc f acceleration mil - std - 883, method 2001, tc a altitude 50,000 feet minimum to deep space radiation radiation testing is not performed, but these tcxos have been acceptable for use in environments up to 100k rads by analysis of the components used. bipolar semiconductors are employed in combination with a cmos micr ocircuit in this part and shall be from a wafer proven to be radiation tolerant to 100 krad (si) total ionizing dose. this device is specified to be single event latchup free for let up to 93 mev - cm 2 /mg.. a copy of the parts list and materials can be provi ded for review. electrostatic discharge sensitivity the tcxo supplied to this drawing shall be considered to be electrostatic di s charge sensitive and require further protection and shall use one of the packaging requirements in accordance with mil - prf - 385 34, category a, section 5.3.2.4 transportability . the tcxo shall be capable of being transported by air, ship or road when packaged in a suitable container . 3.3 design and construction the design and construction of the crystal oscillator shall be as sp ecified herein. as a minimum, the oscillators shall meet the design and construction requirements of mil - prf - 55310, e x cept element evaluation shall be as spe cified in 3.3.1 operation design, construction & component screen (see 3.3.2) mil - prf - 55310 clas s s workmanship m883, method 2017 for class s screening mil - prf - 55310 class s non - destruct wire bond pull 100%, m883, method 2023 (2.4 grams) internal visual mil - std - 883, methods 2017 & 2032 condition k (class s) . during the time interval between final internal visual inspection and prepar a tion for sealing, hybrid crystal oscillators shall be stored in a dry, controlled environment as defined in mil - std - 883, method 2017 or in a vacuum bake oven. stabilization bake 48 hrs minimum @ +150 c m883, me thod 1008 tc b thermal shock m883, method 1011, tc a temperature cycling m883, method 1010, tc b constant acceleration m883, method 2001, tc a (5000 gs, y1 axis only) seal test (fine & gross) 100% method 1014, (tc a1 for fine leak and tc c for gross leak) pind m883, method 2020, tc b electrical test frequency, output levels, input current@ +25 c burn - in (powered with load) +125 c for 240 hours electrical test frequency, output levels, input current @ +25 c & temp extremes listed on the electri cal specification radiographic m883, method 2012 class s group a 100% group b (30 day aging @ +70 c) 100% external visual 883 method 2009
qt821 and qt822 square - wave rev. q - tech corpor a tion 10150 w. jefferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 5 of 8 a 3.3.1 all piece parts shall be derived from lots that meet the element evaluation requir e ments of mil - prf - 38 534, class k , with the following exceptions: active elements a) visual inspection of silicon on sapphire microcircuits. semicircular crack(s) or multiple adjacent cracks, not in the active area, starting and terminating at the edge of the die are a cceptable. attached (chip in place) sapphire is nonconductive material and shall not be considered as foreign material and will be considered as nonconductive mat e rial for all inspection criteria. b) subgroup 4, scanning electron microscope (sem) inspection. the manufacturer may allow the die distributor, at his option, to select two (2) dice from a waffle pack (containing a maximum quantity of 100 die), visually i n spect for the worst case metallization of the 2 dice, and take sem photographs of the worst case . c) subgroup 5 radiation tests. subgroup 5 radiation tests are not required unless otherwise spec i fied in the detail purchase order. 3.3.2 processes - processes used for manufacturing the tcxo are selected on the basis of their ability to meet the quality r equirements for space high reliability manufacturing. travelers or process cards are used in the manufacturing and testing of all of the tcxo series, and might be available for customer review. copies of these travelers can be provided with the tcxos at ti me of shipment if so specified on the purchase order. 3.3.3 interchangeability - each tcxo shall be interchangeable without using a special selection process. 3.3. 4 product marking - each unit shall be permanently marked with the manufacturer's name or sym bol, part number, lot date code number, and serial number. the unit shall be marked with the outline of an equilateral tr i angle near pin 1 to show that it contains devices which are sensitive to electrostatic discharge. 3.4 parts program devices delivered to this specification represent the standardized parts, materials and processes (pmp) program developed, implemented and certified for advanced applications and extended environments. 3.4.1 quartz crystal resonator - the crystal resonator used shall be constructed using premium synthetic swept quartz and procured to q - t ech scd. for the engineering models, non - swept quartz may be used. 3.5 traceability requirements material, element and process traceability requirements shall be as specified by mil - prf - 38534 for c lass k hybrids. 3.6 data 3.6.1. design documentation - when required by the purchase order, design, topography, process and flow charts for all assembly/inspection and test operation for devices to be supplied under this specification on the i nitial procurement shall be established and shall be available in - plant for review by the procuring activity upon request. this design document a tion shall be sufficient to depict the physical and electrical construction of the devices supplied under the s pecification and shall be traceable to the specific parts, drawings or part type numbers to which it applies, and to the production lot(s) and
qt821 and qt822 square - wave rev. q - tech corpor a tion 10150 w. jefferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 6 of 8 a inspection lot codes under which devices are manufactured and tested so that revisions can be identified. 3.6.2. technic al data package. when required by the purchase order, the following d e sign documentation and information is deliverable 30 days prior to the start of production. the technical data package shall consist of the following: a) assembly drawing(s). b) all electrica l schematics and drawings not considered proprietary . c) the assembly and screening travelers to be used on - line to manufacture the devices supplied to this specification . d) parts and materials list. 3.7 test report a test report is supplied with each shipment of oscillators and includes the following inform a tion, as a minimum: a) a certificate of conformance to all specifications and purchase order requirements. as a minimum, the ce r tificate of conformance shall include the following information: purchase order n umber applicable part number manufacturer s lot number lot date c ode b) parts and materials traceability information. c) certificate of crystal sweeping. d) manufacturing lot traveler. e) screening attributes and variables data as applicable. f) quality conformance i nspection attributes and variables data as applicable. g) radiographic inspection negatives. 3.8 e ngineering models engineering models are fit, form, and function representative of flight models and of commercial construction using commercial parts of same gener ic type as flight models. completed oscillators are not screened. notes: this oscillator is offered to meet the specifications above and is not guaranteed to meet any other requirements .
qt821 and qt822 square - wave rev. q - tech corpor a tion 10150 w. jefferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 7 of 8 a fluke 8050a com ma v volt- meter .01 uf .01 uf .01 uf vc vcc device under test out gnd tek2465b oscillo- scope vert signal out 15 pf (including probes) common hp6205c power supply amp- meter freq counter hp53181a ? part number generation engineering models are designated by adding "e" in front of the part number. series output type and supply voltage symmetry temperature range ( c) stability (overall) frequency (mhz) external tuning 1. hcmos .5.0v a: 40% 60% n: 0 +50 1 ppm x : no tuning 2. hcmos .3.3v t: (see note 2) p : 0 +70 1 ppm 2.000 90.000 (see note 1 ) r: external resistor q: 0 +70 2 ppm v: external voltage r: 0 +70 5 ppm u: - 20 +70 1 ppm v: - 20 +70 2 ppm w: - 20 +70 5 ppm x: - 4 0 +85 4 ppm y: - 40 +85 5 ppm z: - 40 +85 10 ppm qt82: 32 pin flat pack (see note 1 below) 1. variations from standard specification are available, please contact factory. 2. 45/55 symmetry contact factory for options available. example: the qt8 2 2au - 50. 000 000- r would be a hf tcxo, 24 pin smd flat pack, hcmos 3.3 volts, 40 / 60 symmetry, stability 1 ppm over - 20 +70 c, @ 5 0 mhz with external tuning via external resistor ? recommended electrical test diagram
qt821 and qt822 square - wave rev. q - tech corpor a tion 10150 w. jefferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 8 of 8 a 1 16 17 32 1.015 max. 30x .050 ?.005 non-accumulative 32x .015 ?.003 2x .750 .325 ?.025 2 places 32x .010 ?.002 .200 max. 32x .072 ?.007 esd symbol for pin no. 1 d/c s/n q-tech usa part number frequency 1.015 max. typ. ref. 4x r. 025 max. 2x .125 ref. figure 1 in terface control drawing 32 pin flat pak pin no. designation 1 - 3 nc 4 external frequency adjust ment (when specified) 5 ground/case 6 - 10 nc 11 supply voltage 12 rf output 13 supply voltage 14 - 32 nc notes: dimensions are in inches. lead numbers are for reference only and are not marked on the unit. a trian gle symbol is marked on the corner of the package to indicate pin 1 all pins with nc function may not be connected as external tie or connections (pins may be connected internally).
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